Search results for "Auger effect"
showing 9 items of 9 documents
Core hole screening and decay rates of double core ionized first row hydrides.
2013
Because of the high intensity, X-ray free electron lasers allow one to create and probe double core ionized states in molecules. The decay of these multiple core ionized states crucially determines the evolution of radiation damage in single molecule diffractive imaging experiments. Here we have studied the Auger decay in hydrides of first row elements after single and double core ionization by quantum mechanical ab initio calculations. In our approach the continuum wave function of the emitted Auger electron is expanded into spherical harmonics on a radial grid. The obtained decay rates of double K-shell vacancies were found to be systematically larger than those for the respective single …
Mechanisms of Strong Photoluminescence from Si Nanocrystals
2011
Photoluminescence mechanisms (models) are reviewed and experimental data are analyzed based on our model, related to direct radiative transitions from the second conduction sub-band to the first one.
<title>New aspect of light emission from silicon nanocrystals</title>
2003
Intensive light emission (photoluminescence) from silicon nanocrystals has been interpreted in literature as recombinative emission. It has been supposed that the band structure is "pseidodirect." The literature analysis presented in our paper shows that the band structure is indirect and therefore intensive recombinative emission is not possible. According to new aspect, a part of electrons reaches the second conduction subband due to Auger recombination. Then the intensive visible radiation could be caused by transitions of these electrons from the second to the first conduction subband. We have constructed continuity equations for the electron concentration in the first and the second co…
Study of very thin oxide layers by conversion and Auger electrons
1990
Oxidic layers as thin as 20–30 A on α-Fe and stainless steel are studied by57Fe-DCEMS with K-conversion electrons and ICEMS. No indication of a vanishingf-factor could be found. Mossbauer spectra, recorded by use of LMM-Auger electrons (AEMS) and by electrons emitted with energies below 15 eV (LEEMS), contain information on the surface layer as well as on the bulk material, showing that part of these electrons are due to secondary effects and the high escape depths of K-conversion electrons.
Improvement of ESR dosimetry for thermal neutron beams through the addition of gadolinium.
2007
In this paper, the addition of gadolinium is proposed as a useful tool to enhance the electron spin resonance (ESR) sensitivity of organic compounds to thermal neutrons. The target of this work is the detection, through the ESR technique, of the thermal neutron fluence in a mixed field of photons and neutrons. Gadolinium was chosen because it has a very high capture cross section to thermal neutrons; its nuclear reaction with thermal neutrons induces complex inner shell transitions that generate, besides other particles, Auger electrons, which in turn release their energy in the neighborhood (only several nanometers) of the place of reaction. Gadolinium was added to two organic molecules: a…
Radiative phonon-assisted and Auger recombination in Si nanocrystals
2010
Abstract Recent analysis of the literature shows that the photoluminescence (PL) of Si nanocrystals and porous silicon is caused by phonon-assisted exciton radiative recombination, as well as by direct radiative electron transfer from the second to the first conduction sub-band, which is related to the Auger recombination. The PL decay curve for porous silicon after excitation with ultraviolet laser pulse has been established experimentally. We have constructed continuity equations for the first and the second conduction sub-bands, including radiative phonon-assisted exciton recombination, Auger recombination and direct radiative transition from the second to the first conduction sub-band. …
Photoluminescence from silicon nanocrystals initiated by Auger recombination
2006
Abstract The mechanism of intense photoluminescence (PL) of silicon nanocrystals (nc-si), so interpreted as recombinative emission is reconsidered. Analysis of available theoretical and experimental data is presented to show that nc-si have an indirect band structure and, therefore, it is doubtful that electron–hole recombination is the only mechanism of intense emission. A model is proposed according to which a fraction of electrons reaches the second conduction sub-band by Auger recombination, a part of intense visible radiation being caused by direct electron transitions from the second conduction sub-band to the first one. Continuity equations are constructed in the first and the second…
Evaluation of high-energy brachytherapy source electronic disequilibrium and dose from emitted electrons
2009
Purpose: The region of electronic disequilibrium near photon-emitting brachytherapysources of high-energy radionuclides ( C 60 o , C 137 s , I 192 r , and Y 169 b ) and contributions to total dose from emitted electrons were studied using the GEANT4 and PENELOPEMonte Carlo codes. Methods: Hypothetical sources with active and capsule materials mimicking those of actual sources but with spherical shape were examined. Dose contributions due to sourcephotons, x rays, and bremsstrahlung; source β − , Auger electrons, and internal conversionelectrons; and water collisional kerma were scored. To determine if conclusions obtained for electronic equilibrium conditions and electrondose contribution t…
Electron trapping centres and cross sections in LiNbO3studied by57Co Mössbauer emission spectroscopy
1999
Fast electron trapping processes and aliovalent charge states following the 57Co(EC)57Fe decay are studied in undoped, 5.4 mol% Mg-doped and 0.1 mol% Fe-doped LiNbO3 in various thermochemical reduction (TCR) states. Static 57Co Mossbauer emission spectra of congruent Mg:LiNbO3 recorded at T = 4.2 K in external magnetic field of 4.6 T are presented. Trapping cross section ratios are derived for Fe3+Li, Nb5+Li and Mg2+Li. A method to determine trap concentrations for TCR states of LiNbO3 is outlined. The electron-capture distance of the traps is found to be 2.7±1.4 nm. As this is much smaller than the 6 keV Auger-electron penetration depth, it is concluded that the distribution of the alioval…